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| 2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N - CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . * VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 * ID = 8A * RDSON = 0.18 45 TO-39 METAL PACKAGE Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1.0m) VGS Gate-Source Voltage ID Drain Current Continuous IDM Drain Current Pulsed PD Total Device Dissipation @ TC = 25C Derate above 25C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 s VDSS 100V 100V 20V 8.0A 32A 25W 0.2W/ CW -55 to +150C 5.0CW 175CW 300C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 2N6796 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS V(BR)DSS IDSS IGSSF IGSSR VGS(th) rDS(on) VDS(on) gfs Ciss Coss Crss ton toff tr tf VSD ton trr Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse VGS = 0 VDS = 80V VDS = 0 VDS = 0 VDS = VGS VGS = 10V VGS = 10V VGS = 15V ID = 0.25mA VGS = 0 VGS = 0 TJ = 125C VGS = 20V VGS = -20V ID = 0.5mA ID = 5.0A TA = 125C ID = 8.0A ID = 5.0A Min. 100 Typ. Max. Unit V 250 1000 100 -100 A VDS=Rated VDSS nA ON CHARACTERISTICS Gate Thresshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance 2.0 4.0 0.18 0.35 1.56 3.0 350 150 50 9.0. 900 500 150 30 VDD = 30V ID = 5.0A 75 40 45 0.75 1.5 Negligible V V mhos DYNAMIC CHARACTERISTICS Input Capacitance Output capacitance Reverse Transfer Capacitance VDS = 25V VGS = 0 pF f = 1.0MHZ SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time RiseTime FallTime Rgen = 50 ohms ns SOURCE DRAIN DIODE CHARACTERISTICS* Diode Forward Voltage Forward turn-On Time Reverse Recovery Time IS = Rated ID(on) VGS = 0 V ns 300 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 |
Price & Availability of 2N6796
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